发明授权
- 专利标题： Semiconductor device and manufacturing method thereof
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US13449371申请日： 2012-04-18
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公开(公告)号： US08497508B2公开(公告)日： 2013-07-30
- 发明人: Jun Koyama , Hisashi Ohtani , Yasushi Ogata , Shunpei Yamazaki
- 申请人： Jun Koyama , Hisashi Ohtani , Yasushi Ogata , Shunpei Yamazaki
- 申请人地址： JP Atsugi-shi, Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Atsugi-shi, Kanagawa-ken
- 代理机构： Fish & Richardson P.C.
- 优先权： JP08-358956 19961230
- 主分类号： H01L29/04
- IPC分类号： H01L29/04 ; H01L31/0376 ; H01L31/20 ; H01L31/036
摘要：
A wiring line is electrically connected in parallel to an auxiliary wiring line via a plurality of contact holes. The contact holes are formed through an insulating film and arranged in vertical direction to the wiring line. Since the auxiliary wiring line is formed in the same layer as an electrode that constitutes a TFT, the electric resistance of the wiring line can be reduced effectively without increasing the number of manufacturing steps.
公开/授权文献
- US20120199986A1 Semiconductor Device and Manufacturing Method Thereof 公开/授权日：2012-08-09
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