发明授权
- 专利标题： Thin film transistor and display unit
- 专利标题（中）： 薄膜晶体管和显示单元
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申请号： US13287689申请日： 2011-11-02
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公开(公告)号： US08497504B2公开(公告)日： 2013-07-30
- 发明人: Toshiaki Arai , Narihiro Morosawa , Kazuhiko Tokunaga , Hiroshi Sagawa , Kiwamu Miura
- 申请人： Toshiaki Arai , Narihiro Morosawa , Kazuhiko Tokunaga , Hiroshi Sagawa , Kiwamu Miura
- 申请人地址： JP Tokyo
- 专利权人： Sony Corporation
- 当前专利权人： Sony Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Dentons US LLP
- 优先权： JP2009-027646 20090209
- 主分类号： H01L29/10
- IPC分类号： H01L29/10
摘要：
A thin film transistor with which oxygen is easily supplied to an oxide semiconductor layer and favorable transistor characteristics are able to be restored and a display unit including the same. The thin film transistor includes, sequentially over a substrate, a gate electrode, a gate insulting film, an oxide semiconductor layer including a channel region, and a channel protective layer covering the channel region A source electrode and a drain electrode are formed on the oxide semiconductor layer located on both sides of the channel protective layer, and at least one of the source electrode and the drain electrode has an aperture to expose the oxide semiconductor layer.
公开/授权文献
- US20120043548A1 THIN FILM TRANSISTOR AND DISPLAY UNIT 公开/授权日：2012-02-23
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