Invention Grant
US08497233B2 Stripping compositions for cleaning ion implanted photoresist from semiconductor device wafers
有权
用于从半导体器件晶片清洗离子注入的光致抗蚀剂的剥离组合物
- Patent Title: Stripping compositions for cleaning ion implanted photoresist from semiconductor device wafers
- Patent Title (中): 用于从半导体器件晶片清洗离子注入的光致抗蚀剂的剥离组合物
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Application No.: US13138468Application Date: 2010-02-18
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Publication No.: US08497233B2Publication Date: 2013-07-30
- Inventor: Glenn Westwood
- Applicant: Glenn Westwood
- Applicant Address: US PA Center Valley
- Assignee: Avantor Performance Materials, Inc.
- Current Assignee: Avantor Performance Materials, Inc.
- Current Assignee Address: US PA Center Valley
- Agency: Hoffmann & Baron, LLP
- International Application: PCT/US2010/024529 WO 20100218
- International Announcement: WO2010/099017 WO 20100902
- Main IPC: C11D7/50
- IPC: C11D7/50 ; C11D11/00
Abstract:
A composition for removal of high dosage ion implanted photoresist from the surface of a semiconductor device, the composition having at least one solvent having a flash point >65° C., at least one component providing a nitronium ion, and at least one phosphonic acid corrosion inhibitor compound, and use of such a composition to remove high dosage ion implanted photoresist from the surface of a semiconductor device.
Public/Granted literature
- US20120028871A1 STRIPPING COMPOSITIONS FOR CLEANING ION IMPLANTED PHOTORESIST FROM SEMICONDUCTOR DEVICE WAFERS Public/Granted day:2012-02-02
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