发明授权
US08497233B2 Stripping compositions for cleaning ion implanted photoresist from semiconductor device wafers
有权
用于从半导体器件晶片清洗离子注入的光致抗蚀剂的剥离组合物
- 专利标题： Stripping compositions for cleaning ion implanted photoresist from semiconductor device wafers
- 专利标题（中）： 用于从半导体器件晶片清洗离子注入的光致抗蚀剂的剥离组合物
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申请号： US13138468申请日： 2010-02-18
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公开(公告)号： US08497233B2公开(公告)日： 2013-07-30
- 发明人: Glenn Westwood
- 申请人： Glenn Westwood
- 申请人地址： US PA Center Valley
- 专利权人： Avantor Performance Materials, Inc.
- 当前专利权人： Avantor Performance Materials, Inc.
- 当前专利权人地址： US PA Center Valley
- 代理机构： Hoffmann & Baron, LLP
- 国际申请： PCT/US2010/024529 WO 20100218
- 国际公布： WO2010/099017 WO 20100902
- 主分类号： C11D7/50
- IPC分类号： C11D7/50 ; C11D11/00
摘要：
A composition for removal of high dosage ion implanted photoresist from the surface of a semiconductor device, the composition having at least one solvent having a flash point >65° C., at least one component providing a nitronium ion, and at least one phosphonic acid corrosion inhibitor compound, and use of such a composition to remove high dosage ion implanted photoresist from the surface of a semiconductor device.
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