发明授权
- 专利标题： Semiconductor process
- 专利标题（中）： 半导体工艺
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申请号： US13243485申请日： 2011-09-23
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公开(公告)号： US08497198B2公开(公告)日： 2013-07-30
- 发明人: Chin-Cheng Chien , Chun-Yuan Wu , Chih-Chien Liu , Chin-Fu Lin , Teng-Chun Tsai
- 申请人： Chin-Cheng Chien , Chun-Yuan Wu , Chih-Chien Liu , Chin-Fu Lin , Teng-Chun Tsai
- 申请人地址： TW Hsinchu
- 专利权人： United Microelectronics Corp.
- 当前专利权人： United Microelectronics Corp.
- 当前专利权人地址： TW Hsinchu
- 代理机构： J.C. Patents
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763 ; H01L21/3205 ; H01L21/336
摘要：
A semiconductor process is described as follows. A plurality of dummy patterns is formed on a substrate. A mask material layer is conformally formed on the substrate, so as to cover the dummy patterns. The mask material layer has an etching rate different from that of the dummy patterns. A portion of the mask material layer is removed, so as to form a mask layer on respective sidewalls of each dummy pattern. An upper surface of the mask layer and an upper surface of each dummy pattern are substantially coplanar. The dummy patterns are removed. A portion of the substrate is removed using the mask layer as a mask, so as to form a plurality of fin structures and a plurality of trenches alternately arranged in the substrate. The mask layer is removed.
公开/授权文献
- US20130078778A1 SEMICONDUCTOR PROCESS 公开/授权日：2013-03-28
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