An integrated circuit containing a configurable dual n/p-channel 3-D resurf high voltage MOS field effect transistor (MOSFET) is disclosed. An n-channel drain is coterminous with a p-channel source in an n-well, and a p-channel drain is coterminous with an n-channel source in a p-well. A lateral drift region including n-type drift lanes and p-type drift lanes extends between the n and p wells. A resurf layer abuts the lateral drift region. The n-channel MOS gate is separate from the p-channel MOS gate. The p-channel MOS gate may be operated as a field plate in the n-channel mode, and vice versa. An n-channel MOS transistor may be integrated into the n-channel MOS source to provide an n-channel cascode transistor configuration, and similarly for a p-channel cascode configuration, to debias parasitic bipolar transistors under the MOS gates. Circuits using the MOSFET with various loads are also disclosed.