Invention Grant
- Patent Title: Flash memory storage apparatus
- Patent Title (中): 闪存存储设备
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Application No.: US13480076Application Date: 2012-05-24
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Publication No.: US08482128B2Publication Date: 2013-07-09
- Inventor: Yu-Fong Lin , Hung-Yi Chung , Yu-Tong Lin , Yun-Chieh Chen
- Applicant: Yu-Fong Lin , Hung-Yi Chung , Yu-Tong Lin , Yun-Chieh Chen
- Applicant Address: TW Miaoli
- Assignee: Phison Electronics Corp.
- Current Assignee: Phison Electronics Corp.
- Current Assignee Address: TW Miaoli
- Agency: J.C. Patents
- Priority: TW98111461A 20090406
- Main IPC: H01L23/48
- IPC: H01L23/48
Abstract:
A flash memory storage apparatus is provided. The flash memory storage apparatus includes a substrate, a control and storage circuit unit, a ground lead, at least a signal lead, and a power lead. The control and storage circuit unit, the power lead, the signal lead, and the ground lead are disposed on the substrate, in which the power lead, the signal lead, and the ground lead respectively electrically connect to the control and storage circuit unit. Moreover, the flash memory storage apparatus further includes an extra ground lead electrically connected to the ground lead or a protrusion on the substrate, such that the ground lead first electrically connects to a host when the flash memory storage apparatus is plugged into the host.
Public/Granted literature
- US20120230102A1 FLASH MEMORY STORAGE APPARATUS Public/Granted day:2012-09-13
Information query
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