发明授权
- 专利标题： Resistor and manufacturing method thereof
- 专利标题（中）： 电阻及其制造方法
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申请号： US13220721申请日： 2011-08-30
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公开(公告)号： US08477006B2公开(公告)日： 2013-07-02
- 发明人: Jie-Ning Yang , Shih-Chieh Hsu , Chun-Hsien Lin , Yao-Chang Wang , Chi-Horn Pai , Chi-Sheng Tseng
- 申请人： Jie-Ning Yang , Shih-Chieh Hsu , Chun-Hsien Lin , Yao-Chang Wang , Chi-Horn Pai , Chi-Sheng Tseng
- 申请人地址： TW Science-Based Industrial Park, Hsin-Chu
- 专利权人： United Microelectronics Corp.
- 当前专利权人： United Microelectronics Corp.
- 当前专利权人地址： TW Science-Based Industrial Park, Hsin-Chu
- 代理商 Winston Hsu; Scott Margo
- 主分类号： H01C1/012
- IPC分类号： H01C1/012
摘要：
A manufacturing method for a resistor integrated with a transistor having metal gate includes providing a substrate having a transistor region and a resistor region defined thereon, respectively forming a transistor having a dummy gate in the transistor region and a resistor in the resistor region, removing the dummy gate and portions of the resistor to form a first trench in the transistor and two second trenches in the resistor, forming at least a high-k gate dielectric layer in the first trench and the second trenches, and forming a metal gate in the first trench and metal structures respectively in the second trenches.
公开/授权文献
- US20130049924A1 RESISTOR AND MANUFACTURING METHOD THEREOF 公开/授权日：2013-02-28
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