Invention Grant
- Patent Title: Method of manufacturing storage apparatus
- Patent Title (中): 储存装置的制造方法
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Application No.: US13747025Application Date: 2013-01-22
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Publication No.: US08476110B2Publication Date: 2013-07-02
- Inventor: Wei-Hung Lin , Chun-Feng Lee , Chang-Chih Chen
- Applicant: Phison Electronics Corp.
- Applicant Address: TW Miaoli
- Assignee: Phison Electronics Corp.
- Current Assignee: Phison Electronics Corp.
- Current Assignee Address: TW Miaoli
- Agency: J.C. Patents
- Priority: TW99124005A 20100721
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A storage apparatus including a circuit board, a control circuit element, a terminal module and a storage circuit element is provided. The circuit board includes a first surface, a second surface, a connect part, openings, metal contacts and metal units. The openings pass through the circuit board from the first surface to the second surface and the metal contacts are exposed on the first surface. The terminal module is disposed on the first surface and has elastic terminals and each of the elastic terminals has a first contact part and a second contact part. The first contact parts respectively contact with the metal contacts and the second contact parts respectively pass through the openings to protrude from the second surface. The metal units are disposed on the second surface and located between the openings and the connect part. Accordingly, the volume of the storage apparatus can be reduced.
Public/Granted literature
- US20130133191A1 METHOD OF MANUFACTURING STORAGE APPARATUS Public/Granted day:2013-05-30
Information query
IPC分类: