发明授权
- 专利标题: Radio frequency multilayer substrate and manufacturing method of radio frequency multilayer substrate
- 专利标题(中): 射频多层基板及射频多层基板的制造方法
-
申请号: US12507290申请日: 2009-07-22
-
公开(公告)号: US08471767B2公开(公告)日: 2013-06-25
- 发明人: Akihiro Satomi
- 申请人: Akihiro Satomi
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2008-211950 20080820
- 主分类号: H01Q1/38
- IPC分类号: H01Q1/38
摘要:
A radio frequency multilayer substrate which has a connection portion connecting a strip line and a microstrip line, of which connection portion improves VSWR, is provided. The high frequency multilayer substrate has a through-hole which electrically connects a central conductor of the strip line and a central conductor of the microstrip line. The high frequency multilayer substrate also has an insulating hole which does not have a conductor inside. The through-hole is connected with the insulating hole. A length of the conductor layer of the through-hole from the central conductor to an insulating hole is smaller than one half the distance from the central conductor to a 2nd ground conductor. The insulating hole can be formed by cutting the through-hole.
公开/授权文献
信息查询