发明授权
US08468408B2 Memory built-in self test (MBIST) circuitry configured to facilitate production of pre-stressed integrated circuits and methods
有权
存储器内置自检(MBIST)电路,配置为便于生产预应力集成电路和方法
- 专利标题: Memory built-in self test (MBIST) circuitry configured to facilitate production of pre-stressed integrated circuits and methods
- 专利标题(中): 存储器内置自检(MBIST)电路,配置为便于生产预应力集成电路和方法
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申请号: US12883450申请日: 2010-09-16
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公开(公告)号: US08468408B2公开(公告)日: 2013-06-18
- 发明人: Wei-Yu Chen , Kevin Badgett , Kay Hessee
- 申请人: Wei-Yu Chen , Kevin Badgett , Kay Hessee
- 申请人地址: US CA Sunnyvale
- 专利权人: Advanced Micro Devices, Inc.
- 当前专利权人: Advanced Micro Devices, Inc.
- 当前专利权人地址: US CA Sunnyvale
- 代理机构: Volpe and Koenig, P.C.
- 主分类号: G01R31/28
- IPC分类号: G01R31/28
摘要:
Integrated circuits with memory built-in self test (MBIST) circuitry and methods are disclosed that employ enhanced features. In one aspect of the invention, MBST circuitry is used set memory elements of arrays to a first state and then to an inverse state during a burn-in operation to maintain each of the two opposing states for a desired time in order to either force a failure of the integrated circuit component or produce a pre-stressed component beyond an infancy stage. Preferably, an integrated circuit is provided having MIBST circuitry configured to serially test multiple arrays of memory elements within a component of the integrated circuit and to also conduct parallel initialization of the serially tested arrays.
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