发明授权
- 专利标题： Soldering relief method and semiconductor device employing same
- 专利标题（中）： 焊接补救方法和使用其的半导体器件
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申请号： US13228925申请日： 2011-09-09
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公开(公告)号： US08461676B2公开(公告)日： 2013-06-11
- 发明人: Mark Wendell Schwarz , Jianwen Xu
- 申请人： Mark Wendell Schwarz , Jianwen Xu
- 申请人地址： US CA San Diego
- 专利权人： QUALCOMM Incorporated
- 当前专利权人： QUALCOMM Incorporated
- 当前专利权人地址： US CA San Diego
- 代理商 Michelle Gallardo
- 主分类号： H01L23/02
- IPC分类号： H01L23/02 ; H01L23/12 ; H01L23/053 ; H01L21/00
摘要：
A semiconductor device includes a substrate having a first side and a second side, the second side having a mounting location for at least one semiconductor element, and the first side having a plurality of locations electrically connected to locations on the second side. A plurality of electrically conductive interconnects are provided at the locations, each having a first end attached at the location and a second end spaced from the substrate, and an encapsulant partially encapsulates the plurality of interconnects and has a surface lying in a first plane. The second ends are located on the side of the first plane opposite from the substrate first side, an annular space in the encapsulant surrounds each of the plurality of electrically conductive interconnects, and the annular space has a bottom located between the first plane and the substrate first side. Also a method for making such a semiconductor device.
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