Invention Grant
US08458538B2 Latency detection in a memory built-in self-test by using a ping signal
失效
通过使用ping信号在存储器内置自检中的延迟检测
- Patent Title: Latency detection in a memory built-in self-test by using a ping signal
- Patent Title (中): 通过使用ping信号在存储器内置自检中的延迟检测
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Application No.: US12709605Application Date: 2010-02-22
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Publication No.: US08458538B2Publication Date: 2013-06-04
- Inventor: Kay Hesse , Suresh Periyacheri
- Applicant: Kay Hesse , Suresh Periyacheri
- Applicant Address: US TX Austin
- Assignee: Advanced Micro Devices, Inc.
- Current Assignee: Advanced Micro Devices, Inc.
- Current Assignee Address: US TX Austin
- Agency: Williams, Morgan & Amerson, P.C.
- Priority: DE102009010886 20090227
- Main IPC: G11C29/00
- IPC: G11C29/00
Abstract:
In a complex semiconductor device including embedded memories, the round trip latency may be determined during a memory self-test by applying a ping signal having the same latency as control and failure signals used during the self-test. The ping signal may be used for controlling an operation counter in order to obtain a reliable correspondence between the counter value and a memory operation causing a specified memory failure.
Public/Granted literature
- US20100223513A1 LATENCY DETECTION IN A MEMORY BUILT-IN SELF-TEST BY USING A PING SIGNAL Public/Granted day:2010-09-02
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