- 专利标题： Reversible low-energy data storage in phase change memory
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申请号： US12958502申请日： 2010-12-02
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公开(公告)号： US08437182B2公开(公告)日： 2013-05-07
- 发明人: Johannes A. Kalb , Brett E. Klehn
- 申请人： Johannes A. Kalb , Brett E. Klehn
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Cool Patent, P.C.
- 主分类号： G11C11/09
- IPC分类号： G11C11/09
摘要：
A phase change memory (PCM) device utilizes low energy pulses to write data to PCM storage elements (cells). Methods, devices and systems are described that use low energy reset pulses to reset cells that have been previously set using a method that keeps a portion of the PCM cells in an amorphous phase. The reset is reversible by utilizing a low energy set pulse.
公开/授权文献
- US08467239B2 Reversible low-energy data storage in phase change memory 公开/授权日：2013-06-18
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