发明授权
- 专利标题: Semiconductor light emitting device and method for manufacturing the same
- 专利标题(中): 半导体发光器件及其制造方法
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申请号: US13028920申请日: 2011-02-16
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公开(公告)号: US08436384B2公开(公告)日: 2013-05-07
- 发明人: Ho Sang Yoon
- 申请人: Ho Sang Yoon
- 申请人地址: KR Seoul
- 专利权人: LG Innotek Co., Ltd.
- 当前专利权人: LG Innotek Co., Ltd.
- 当前专利权人地址: KR Seoul
- 代理机构: Birch, Stewart, Kolasch & Birch, LLP
- 优先权: KR10-2007-0036857 20070416
- 主分类号: H01L33/00
- IPC分类号: H01L33/00
摘要:
Disclosed are a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises a substrate, in which concave-convex patterns are in at least a portion of a backside of the substrate, and a light emitting structure on the substrate and comprising a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer.
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