Invention Grant
- Patent Title: Conductive pillar for semiconductor substrate and method of manufacture
- Patent Title (中): 半导体基板用导电柱及其制造方法
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Application No.: US12832231Application Date: 2010-07-08
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Publication No.: US08405199B2Publication Date: 2013-03-26
- Inventor: Wen-Hsiung Lu , Ming-Da Cheng , Chih-Wei Lin , Ming-Che Ho , Chung-Shi Liu
- Applicant: Wen-Hsiung Lu , Ming-Da Cheng , Chih-Wei Lin , Ming-Che Ho , Chung-Shi Liu
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe Hauptman Ham & Berner, LLP
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
An embodiment of the disclosure includes a conductive pillar on a semiconductor die. A substrate is provided. A bond pad is over the substrate. A conductive pillar is over the bond pad. The conductive pillar has a top surface, edge sidewalls and a height. A cap layer is over the top surface of the conductive pillar. The cap layer extends along the edge sidewalls of the conductive pillar for a length. A solder material is over a top surface of the cap layer.
Public/Granted literature
- US20120007228A1 CONDUCTIVE PILLAR FOR SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURE Public/Granted day:2012-01-12
Information query
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