Invention Grant
- Patent Title: Methods of forming graphene-containing switches
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Application No.: US13191192Application Date: 2011-07-26
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Publication No.: US08394682B2Publication Date: 2013-03-12
- Inventor: Gurtej S. Sandhu
- Applicant: Gurtej S. Sandhu
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L21/82
- IPC: H01L21/82

Abstract:
Some embodiments include methods of forming graphene-containing switches. A bottom electrode may be formed over a base, and a first electrically conductive structure may be formed to extend upwardly from the bottom electrode. Dielectric material may be formed along a sidewall of the first electrically conductive structure, while leaving a portion of the bottom electrode exposed. A graphene structure may be formed to be electrically coupled with the exposed portion of the bottom electrode. A second electrically conductive structure may be formed on an opposing side of the graphene structure from the first electrically conductive structure. A top electrode may be formed over the graphene structure and electrically coupled with the second electrically conductive structure. The first and second electrically conductive structures may be configured to provide an electric field across the graphene structure.
Public/Granted literature
- US20130029460A1 METHODS OF FORMING GRAPHENE-CONTAINING SWITCHES Public/Granted day:2013-01-31
Information query
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