发明授权
US08392768B2 Memory test system with advance features for completed memory system
有权
内存测试系统具有完善的内存系统的先进功能
- 专利标题: Memory test system with advance features for completed memory system
- 专利标题(中): 内存测试系统具有完善的内存系统的先进功能
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申请号: US13064513申请日: 2011-03-30
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公开(公告)号: US08392768B2公开(公告)日: 2013-03-05
- 发明人: Chia-Hao Lee , Ming-Chuan Huang
- 申请人: Chia-Hao Lee , Ming-Chuan Huang
- 申请人地址: TW Hsinchu
- 专利权人: Sunplus Technology Co., Ltd.
- 当前专利权人: Sunplus Technology Co., Ltd.
- 当前专利权人地址: TW Hsinchu
- 代理机构: Bacon & Thomas, PLLC
- 优先权: TW99117957A 20100603
- 主分类号: G11C29/00
- IPC分类号: G11C29/00
摘要:
In a memory test system with advance features for completed memory system, the hardware components are independently configured to generate versatile test patterns for performing a programmable-loading test, a real case test, and a write-feedback test. The write-feedback test is employed to independently test a memory controller which is embedded in an integrated circuit without communicating with the external SDRAM. In the integrated circuit verification stage, the memory test system supports for analyzing and distinguishing the problems inside or outside of the integrated circuit, and testing individual write and read commands.
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