Invention Grant
- Patent Title: Radiation-tolerant level shifting
- Patent Title (中): 辐射电平变化
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Application No.: US13214040Application Date: 2011-08-19
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Publication No.: US08390327B1Publication Date: 2013-03-05
- Inventor: Charles Parkhurst , Mark Hamlyn
- Applicant: Charles Parkhurst , Mark Hamlyn
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Alan A. R. Cooper; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H03K19/0175
- IPC: H03K19/0175

Abstract:
A system and method for radiation-tolerant level shifting are disclosed. In some embodiments, an integrated circuit may include a plurality of level shifters, where each of the plurality of level shifters configured receive a same logic level in a first voltage domain and to output candidate logic levels in a second voltage domain, and where at least one of the candidate logic levels subject to being different from another one of the candidate logic levels. The integrated circuit may also include a voting circuit coupled to the plurality of level shifters, where the voting circuit is configured to evaluate the candidate logic levels and output a selected logic level based, at least in part, upon the evaluation.
Public/Granted literature
- US20130043903A1 RADIATION-TOLERANT LEVEL SHIFTING Public/Granted day:2013-02-21
Information query
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