Invention Grant
- Patent Title: Process gas delivery for semiconductor process chambers
- Patent Title (中): 半导体处理室的工艺气体输送
-
Application No.: US13456189Application Date: 2012-04-25
-
Publication No.: US08382897B2Publication Date: 2013-02-26
- Inventor: Kedarnath Sangam , Anh N. Nguyen
- Applicant: Kedarnath Sangam , Anh N. Nguyen
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Moser Taboada
- Agent Alan Taboada
- Main IPC: C30B25/14
- IPC: C30B25/14

Abstract:
Methods for gas delivery to a process chamber are provided herein. In some embodiments, a method may include flowing a process gas through one or more gas conduits, each gas conduit having an inlet and an outlet for facilitating the flow of gas through the gas conduits and into a gas inlet funnel having a second volume, wherein each gas conduit has a first volume less than the second volume, and wherein each gas conduit has a cross-section that increases from a first cross-section proximate the inlet to a second cross-section proximate the outlet but excluding any intersection points between the gas inlet funnel and the gas conduit, and wherein the second cross-section is non-circular; and delivering the process gas to the substrate via the gas inlet funnel.
Public/Granted literature
- US20120208372A1 PROCESS GAS DELIVERY FOR SEMICONDUCTOR PROCESS CHAMBERS Public/Granted day:2012-08-16
Information query
IPC分类: