发明授权
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US12770050申请日： 2010-04-29
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公开(公告)号： US08373256B2公开(公告)日： 2013-02-12
- 发明人: Kishou Kaneko , Naoya Inoue , Yoshihiro Hayashi
- 申请人： Kishou Kaneko , Naoya Inoue , Yoshihiro Hayashi
- 申请人地址： JP Kanagawa
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Kanagawa
- 代理机构： Young & Thompson
- 优先权： JP2009-110603 20090430; JP2010-034296 20100219
- 主分类号： H01L23/552
- IPC分类号： H01L23/552
摘要：
A semiconductor device includes: a semiconductor substrate; a semiconductor element formed on a principal surface of the semiconductor substrate and having a multiple-layered interconnect layer; and a heterostructure magnetic shield covering the semiconductor element. The heterostructure magnetic shield includes a first magnetic shield layered structure and a second magnetic shield layered structure that covers the first magnetic shield layered structure. Each of a first and a second magnetic shield layered structures includes a magnetic shielding film composed of a magnetic substance and covering the semiconductor element and a buffer film disposed between the semiconductor element and the magnetic shield films and preventing a diffusion of the magnetic substance.
公开/授权文献
- US20100276791A1 SEMICONDUCTOR DEVICE 公开/授权日：2010-11-04
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