Invention Grant
- Patent Title: Nano-dimensional non-volatile memory cells
- Patent Title (中): 纳米级非易失性存储单元
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Application No.: US13209809Application Date: 2011-08-15
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Publication No.: US08367464B2Publication Date: 2013-02-05
- Inventor: Venugopalan Vaithyanathan , Wei Tian , Insik Jin
- Applicant: Venugopalan Vaithyanathan , Wei Tian , Insik Jin
- Applicant Address: US CA Scotts Valley
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Scotts Valley
- Agency: Mueting Raash & Gebhardt PA
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A non-volatile memory cell that includes a first electrode; a second electrode; and an electrical contact region that electrically connects the first electrode and the second electrode, the electrical contact region has a end portion and a continuous side portion, and together, the end portion and the continuous side portion form an open cavity, wherein the memory cell has a high resistance state and a low resistance state that can be switched by applying a voltage across the first electrode and the second electrode.
Public/Granted literature
- US20110300687A1 NANO-DIMENSIONAL NON-VOLATILE MEMORY CELLS Public/Granted day:2011-12-08
Information query
IPC分类:
