发明授权
- 专利标题: Semiconductor light emitting structure
- 专利标题(中): 半导体发光结构
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申请号: US13225171申请日: 2011-09-02
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公开(公告)号: US08362511B2公开(公告)日: 2013-01-29
- 发明人: Kuo-Lung Fang , Chia-En Lee , Chao-Chen Ye
- 申请人: Kuo-Lung Fang , Chia-En Lee , Chao-Chen Ye
- 申请人地址: TW Hsinchu
- 专利权人: Lextar Electronics Corporation
- 当前专利权人: Lextar Electronics Corporation
- 当前专利权人地址: TW Hsinchu
- 代理机构: McClure, Qualey & Rodack, LLP
- 优先权: TW100116407 20110510
- 主分类号: H01L29/18
- IPC分类号: H01L29/18
摘要:
A semiconductor light emitting structure including a substrate, a second type electrode layer, a reflecting layer, an insulating layer, a first type electrode layer, a first type semiconductor layer, an active layer and a second type semiconductor layer is provided. The second type electrode layer formed on the substrate has a current spreading grating formed by several conductive pillars and conductive walls, which are staggered and connected to each other. The reflecting layer and the insulating layer are formed on the second type electrode layer in sequence, and cover each conductive pillar and each conductive wall. The first type electrode layer, the first type semiconductor layer and the active layer are formed on the insulating layer in sequence. The second type semiconductor layer is formed on the active layer, and covers each conductive pillar and each conductive wall.
公开/授权文献
- US20120286307A1 SEMICONDUCTOR LIGHT EMITTING STRUCTURE 公开/授权日:2012-11-15
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