发明授权
- 专利标题： Integrated circuit device and method for manufacturing integrated circuit device
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申请号： US13308582申请日： 2011-12-01
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公开(公告)号： US08362485B2公开(公告)日： 2013-01-29
- 发明人: Daiki Yamada , Yoshitaka Dozen , Eiji Sugiyama , Hidekazu Takahashi
- 申请人： Daiki Yamada , Yoshitaka Dozen , Eiji Sugiyama , Hidekazu Takahashi
- 申请人地址： JP Atsugi-shi, Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Atsugi-shi, Kanagawa-ken
- 代理机构： Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权： JP2005-161413 20050601
- 主分类号： H01L29/04
- IPC分类号： H01L29/04
摘要：
An object of the present invention is to provide a structure of a thin film circuit portion and a method for manufacturing a thin film circuit portion by which an electrode for connecting to an external portion can be easily formed under a thin film circuit. A stacked body including a first insulating film, a thin film circuit formed over one surface of the first insulating film, a second insulating film formed over the thin film circuit, an electrode formed over the second insulating film, and a resin film formed over the electrode, is formed. A conductive film is formed adjacent to the other surface of the first insulating film of the stacked body to be overlapped with the electrode. The conductive film is irradiated with a laser.
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