发明授权
- 专利标题： Barrier layer for copper interconnect
- 专利标题（中）： 铜互连屏障层
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申请号： US12761805申请日： 2010-04-16
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公开(公告)号： US08361900B2公开(公告)日： 2013-01-29
- 发明人: Shing-Chyang Pan , Han-Hsin Kuo , Chung-Chi Ko , Ching-Hua Hsieh
- 申请人： Shing-Chyang Pan , Han-Hsin Kuo , Chung-Chi Ko , Ching-Hua Hsieh
- 申请人地址： TW
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW
- 代理机构： Lowe Hauptman Ham & Berner, LLP
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
A copper interconnect includes a copper layer formed in a dielectric layer. A liner is formed between the copper layer and the dielectric layer. A barrier layer is formed at the boundary between the liner and the dielectric layer. The barrier layer is a metal oxide.
公开/授权文献
- US20110256715A1 BARRIER LAYER FOR COPPER INTERCONNECT 公开/授权日：2011-10-20
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