发明授权
- 专利标题： Plasma dicing and semiconductor devices formed thereof
- 专利标题（中）： 等离子切割及其形成的半导体器件
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申请号： US12820715申请日： 2010-06-22
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公开(公告)号： US08361884B2公开(公告)日： 2013-01-29
- 发明人: Manfred Engelhardt
- 申请人： Manfred Engelhardt
- 申请人地址： DE Neubiberg
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE Neubiberg
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L21/46
- IPC分类号： H01L21/46 ; H01L21/78 ; H01L21/301
摘要：
In one embodiment, a method of forming a semiconductor device includes forming islands by forming deep trenches within scribe lines of a substrate. The islands have a first notch disposed on sidewalls of the islands. A first electrode stack is formed over a top surface of the islands. The back surface of the substrate is thinned to separate the islands. A second electrode stack is formed over a back surface of the islands.
公开/授权文献
- US20110309479A1 Plasma Dicing and Semiconductor Devices Formed Thereof 公开/授权日：2011-12-22
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