Invention Grant
- Patent Title: Magnetic logic gate
- Patent Title (中): 磁逻辑门
-
Application No.: US12916046Application Date: 2010-10-29
-
Publication No.: US08358154B2Publication Date: 2013-01-22
- Inventor: Romney R. Katti
- Applicant: Romney R. Katti
- Applicant Address: US NJ Morristown
- Assignee: Honeywell International Inc.
- Current Assignee: Honeywell International Inc.
- Current Assignee Address: US NJ Morristown
- Agency: Shumaker & Sieffert, P.A.
- Main IPC: H03K19/20
- IPC: H03K19/20 ; H03K19/094 ; G11C11/22

Abstract:
This disclosure is directed to a magnetic logic gate for implementing a combinational logic function. The magnetic logic gate may include a write circuit configured to apply a spin-polarized current to the magnetoresistive device such that a resulting programmed magnetization state of the magnetoresistive device corresponds to a logic input value of a combinational logic function implemented by the magnetic logic device. The magnetic logic gate may further include a read circuit configured to generate a logic output value for the combinational logic function based on the programmed magnetization state in response to the write circuit applying the spin-polarized current to the magnetoresistive device.
Public/Granted literature
- US20120105101A1 MAGNETIC LOGIC GATE Public/Granted day:2012-05-03
Information query
IPC分类: