- 专利标题： Selecting programming voltages in response to at least a data latch in communication with a sense amplifier
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申请号： US13285697申请日： 2011-10-31
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公开(公告)号： US08339858B2公开(公告)日： 2012-12-25
- 发明人: Seiichi Aritome
- 申请人： Seiichi Aritome
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Leffert Jay & Polglaze, P.A.
- 主分类号： G11C16/04
- IPC分类号： G11C16/04
摘要：
Memory devices and methods of programming memory cells including selecting a voltage to apply to a control gate of the memory cell during programming of a data value of a sense amplifier to the memory cell in response to at least a data value contained in a data latch that is in communication with the sense amplifier.
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