Invention Grant
- Patent Title: Data recovery in multi-level cell nonvolatile memory
- Patent Title (中): 多级单元非易失性存储器中的数据恢复
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Application No.: US12485846Application Date: 2009-06-16
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Publication No.: US08307241B2Publication Date: 2012-11-06
- Inventor: Chris Nga Yee Avila , Jonathan Hsu , Alexander Kwok-Tung Mak , Jian Chen , Grishma Shailesh Shah
- Applicant: Chris Nga Yee Avila , Jonathan Hsu , Alexander Kwok-Tung Mak , Jian Chen , Grishma Shailesh Shah
- Applicant Address: US TX Plano
- Assignee: SanDisk Technologies Inc.
- Current Assignee: SanDisk Technologies Inc.
- Current Assignee Address: US TX Plano
- Agency: Weaver Austin Villeneuve & Sampson, LLP
- Main IPC: G06F11/00
- IPC: G06F11/00
Abstract:
In a nonvolatile memory array, data is stored in multi-level cells (MLC) as upper-page data and lower-page data. Safe copies of both upper-page and lower-page data are stored in on-chip cache during programming. If a write fail occurs, data is recovered from on-chip cache. The controller does not have to maintain safe copies of data.
Public/Granted literature
- US20100318839A1 DATA RECOVERY IN MULTI-LEVEL CELL NONVOLATILE MEMORY Public/Granted day:2010-12-16
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