发明授权
- 专利标题： Method of manufacturing semiconductor device
- 专利标题（中）： 制造半导体器件的方法
-
申请号： US13026830申请日： 2011-02-14
-
公开(公告)号： US08298941B2公开(公告)日： 2012-10-30
- 发明人: Masahiro Yamaguchi
- 申请人： Masahiro Yamaguchi
- 申请人地址： JP Tokyo
- 专利权人： Elpida Memory, Inc.
- 当前专利权人： Elpida Memory, Inc.
- 当前专利权人地址： JP Tokyo
- 代理机构： Foley & Lardner LLP
- 优先权： JPP2010-034842 20100219
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
A method of manufacturing a semiconductor device includes, but is not limited to, the following processes. A seed layer is formed over a substrate. The seed layer includes first, second, and third portions. A first electrode covering the first portion of the seed layer is formed without forming an electrode on the second and third portions of the seed layer. The third portion of the seed layer is removed so that the first and second portions remain over the substrate, and the first and second portions are separated from each other.
公开/授权文献
- US20110207322A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 公开/授权日：2011-08-25
信息查询
IPC分类:
