Invention Grant
- Patent Title: High frequency power source and its control method, and plasma processing apparatus
- Patent Title (中): 高频电源及其控制方法及等离子体处理装置
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Application No.: US10864538Application Date: 2004-06-10
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Publication No.: US08286581B2Publication Date: 2012-10-16
- Inventor: Toshihiro Hayami , Takeshi Ohse , Jun-Ichi Takahira , Jun-Ichi Shimada
- Applicant: Toshihiro Hayami , Takeshi Ohse , Jun-Ichi Takahira , Jun-Ichi Shimada
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2001-375639 20011210; JP2001-375961 20011210
- Main IPC: H01L21/00
- IPC: H01L21/00 ; C23C16/00

Abstract:
In a high-frequency power source, a malfunction is prevented by precisely removing harmonic components or a modulated wave component which develops while producing a plasma, and a proper high frequency power can be impressed on a plasma processing apparatus. The high-frequency power source includes a power monitor constituted of a directional coupler, a mixer, a 100 kHz low-pass filter, a low-frequency detector, and an oscillator. A 100 MHz high-frequency wave including modulated wave components and the like extracted by the directional coupler and 99.9 MHz high-frequency wave oscillated by the oscillator are added by the mixer. An output of the addition is converted by the low-frequency detector into 100 kHz, resulting in detection.
Public/Granted literature
- US20040222184A1 High frequency power source and its control method, and plasma processing apparatus Public/Granted day:2004-11-11
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