发明授权
- 专利标题： Semiconductor device and method of manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
-
申请号： US12425077申请日： 2009-04-16
-
公开(公告)号： US08278696B2公开(公告)日： 2012-10-02
- 发明人: Yoshio Ozawa , Ryota Fujitsuka
- 申请人： Yoshio Ozawa , Ryota Fujitsuka
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权： JP2008-108048 20080417
- 主分类号： H01L29/788
- IPC分类号： H01L29/788
摘要：
A semiconductor device includes a tunnel insulating film formed on a semiconductor substrate, a charge storage insulating film formed on the tunnel insulating film and including at least two separated low oxygen concentration portions and a high oxygen concentration portion positioned between the adjacent low oxygen concentration portions and having a higher oxygen concentration than the low oxygen concentration portions, a charge block insulating film formed on the charge storage insulating film, and control gate electrodes formed on the charge block insulating film and above the low oxygen concentration portions.
公开/授权文献
信息查询
IPC分类:
