发明授权
- 专利标题： Write and erase scheme for resistive memory device
- 专利标题（中）： 电阻式存储器件的写入和擦除方案
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申请号： US12815369申请日： 2010-06-14
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公开(公告)号： US08274812B2公开(公告)日： 2012-09-25
- 发明人: Hagop Nazarian , Sung Hyun Jo
- 申请人： Hagop Nazarian , Sung Hyun Jo
- 申请人地址： US CA Santa Clara
- 专利权人： Crossbar, Inc.
- 当前专利权人： Crossbar, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Ogawa P.C.
- 主分类号： G11C11/00
- IPC分类号： G11C11/00
摘要：
A method for programming a two terminal resistive memory device, the method includes applying a bias voltage to a first electrode of a resistive memory cell of the device; measuring a current flowing through the cell; and stopping the applying of the bias voltage if the measured current is equal to or greater than a predetermined value.
公开/授权文献
- US20110305066A1 WRITE AND ERASE SCHEME FOR RESISTIVE MEMORY DEVICE 公开/授权日：2011-12-15
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