发明授权
- 专利标题： Semiconductor device and manufacturing method thereof
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US12184443申请日： 2008-08-01
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公开(公告)号： US08274077B2公开(公告)日： 2012-09-25
- 发明人: Kengo Akimoto , Tatsuya Honda , Norihito Sone
- 申请人： Kengo Akimoto , Tatsuya Honda , Norihito Sone
- 申请人地址： JP
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP
- 代理机构： Husch Blackwell LLP
- 优先权： JP2005-283782 20050929
- 主分类号： H01L29/10
- IPC分类号： H01L29/10
摘要：
An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.
公开/授权文献
- US20080308806A1 Semiconductor Device and Manufacturing Method Thereof 公开/授权日：2008-12-18
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