A spin-torque based memory device includes a write portion including a fixed ferromagnetic spin-polarizing layer, a spin-transport layer having a spin accumulation region formed above the fixed ferromagnetic spin-polarizing layer. The memory device further includes a read portion in electrical contact with the spin-transport layer. The read portion includes a free layer magnet, a read non-magnetic layer, and a reference layer. The memory device further includes a metal contact region formed overlying the read portion and a nonlinear resistor formed between an upper surface of the spin transport layer and the metal contact region and modulating write and read current paths depending on an applied voltage, thereby creating different current paths for write and read processes.