发明授权
- 专利标题： Variable resistance memory device with an interfacial adhesion heating layer, systems using the same and methods forming the same
- 专利标题（中）： 具有界面粘合加热层的可变电阻记忆装置，使用其的系统及其形成方法
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申请号： US12546387申请日： 2009-08-24
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公开(公告)号： US08270205B2公开(公告)日： 2012-09-18
- 发明人: Jun Liu
- 申请人： Jun Liu
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Dickstein Shapiro LLP
- 主分类号： G11C11/00
- IPC分类号： G11C11/00
摘要：
A variable resistance memory element and method of forming the same. The memory element includes a first electrode, a resistivity interfacial layer having a first surface coupled to said first electrode; a resistance changing material, e.g, a phase change material, having a first surface coupled to a second surface of said resistivity interfacial layer, and a second electrode coupled to a second surface of said resistance changing material.
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