发明授权
- 专利标题: Manufacturing method of bump structure with annular support
- 专利标题(中): 具有环形支撑的凸块结构的制造方法
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申请号: US13209456申请日: 2011-08-15
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公开(公告)号: US08268717B2公开(公告)日: 2012-09-18
- 发明人: Jing-Hong Yang
- 申请人: Jing-Hong Yang
- 申请人地址: BM Hamilton
- 专利权人: ChipMOS Technologies (Bermuda) Ltd.
- 当前专利权人: ChipMOS Technologies (Bermuda) Ltd.
- 当前专利权人地址: BM Hamilton
- 代理机构: Jianq Chyun IP Office
- 优先权: CN200710004497 20070116
- 主分类号: H01L21/44
- IPC分类号: H01L21/44
摘要:
A manufacturing method of a bump structure with an annular support includes the following steps. A substrate including pads and a passivation layer is provided. The passivation has first openings exposing a portion of the pads. An UBM material layer is formed to cover the passivation layer and the pads. A patterned photoresist layer, having second openings respectively exposing the UBM material layer over the pads, is formed on the UBM material layer. A diameter of each second opening located on a lower surface of the patterned photoresist layer is less than that located on an upper surface of the patterned photoresist layer. Bumps are formed in the second openings. A portion of the patterned photoresist layer is removed to form an annular support at a periphery of each bump. The UBM material layer is patterned using the annular supports and the bumps as masks to form UBM layers.
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