发明授权
- 专利标题： Method for producing SOI wafer
- 专利标题（中）： 制造SOI晶圆的方法
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申请号： US12226264申请日： 2007-04-23
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公开(公告)号： US08268705B2公开(公告)日： 2012-09-18
- 发明人: Kazuhiko Yoshida , Masao Matsumine , Hiroshi Takeno
- 申请人： Kazuhiko Yoshida , Masao Matsumine , Hiroshi Takeno
- 申请人地址： JP Tokyo
- 专利权人： Shin-Etsu Handotai Co., Ltd.
- 当前专利权人： Shin-Etsu Handotai Co., Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Oliff & Berridge, PLC
- 优先权： JP2006-118987 20060424
- 国际申请： PCT/JP2007/058735 WO 20070423
- 国际公布： WO2007/125863 WO 20071108
- 主分类号： H01L21/322
- IPC分类号： H01L21/322
摘要：
The present invention is a method for producing an SOI wafer comprising at least a step of forming an ion-implanted damaged layer by ion-implanting a neutral element electrically inactive in silicon from one surface of the base wafer or the bond wafer, in which ion-implanting in the step of forming the ion-implanted damaged layer is performed at a dosage of 1×1012 atoms/cm2 or more and less than 1×1015 atoms/cm2. As a result, there may be provided a method for producing an SOI wafer having sufficient gettering ability while the suppression of leak failure, degradation of oxide dielectric breakdown voltage or the like is provided.
公开/授权文献
- US20090280620A1 Method for Producing Soi Wafer 公开/授权日：2009-11-12
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