发明授权
- 专利标题: Film forming method and apparatus, and storage medium
- 专利标题(中): 成膜方法和装置以及存储介质
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申请号: US12568142申请日: 2009-09-28
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公开(公告)号: US08268396B2公开(公告)日: 2012-09-18
- 发明人: Hitoshi Itoh
- 申请人: Hitoshi Itoh
- 申请人地址: JP Tokyo
- 专利权人: Tokyo Electron Limited
- 当前专利权人: Tokyo Electron Limited
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2007-095162 20070330
- 主分类号: C23C16/00
- IPC分类号: C23C16/00
摘要:
A method for film formation is provided that can significantly suppress the amount of a source gas consumed in the formation of a copper film on a substrate by supplying a gas of a metallic source material complex, for example, copper acetate, produced by the sublimation of a solid source material, as a source gas to the substrate to cause a chemical reaction of the source gas. A source gas produced by the sublimation of a solid source material is supplied into a processing chamber, and the source material is adsorbed as a solid onto an adsorption/desorption member within the processing chamber. Next, the source gas supply and exhaust are stopped, and the processing chamber is brought to the state of a closed space. Thereafter, the substrate is heated, and the source material is chemically reacted on the substrate to form a thin film on the substrate.
公开/授权文献
- US20100015334A1 FILM FORMING METHOD AND APPARATUS, AND STORAGE MEDIUM 公开/授权日:2010-01-21
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