Invention Grant
- Patent Title: Photoelectric conversion device and manufacturing method thereof
- Patent Title (中): 光电转换装置及其制造方法
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Application No.: US12752173Application Date: 2010-04-01
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Publication No.: US08263926B2Publication Date: 2012-09-11
- Inventor: Tatsuya Arao , Atsushi Hirose , Kazuo Nishi , Yuusuke Sugawara
- Applicant: Tatsuya Arao , Atsushi Hirose , Kazuo Nishi , Yuusuke Sugawara
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2005-148864 20050523
- Main IPC: H03F3/08
- IPC: H03F3/08 ; H01L27/00 ; H04N3/14

Abstract:
It is an object to provide a photoelectric conversion device which detects light ranging from weak light to strong light. The present invention relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer, an amplifier circuit including a thin film transistor and a bias switching means, where a bias which is connected to the photodiode and the amplifier circuit is switched by the bias switching means when intensity of incident light exceeds predetermined intensity, and accordingly, light which is less than the predetermined intensity is detected by the photodiode and light which is more than the predetermined intensity is detected by the thin film transistor of the amplifier circuit. By the present invention, light ranging from weak light to strong light can be detected.
Public/Granted literature
- US20100187405A1 PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2010-07-29
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