Invention Grant
US08223470B2 Apparatus and method to improve uniformity and reduce local effect of process chamber
有权
提高加工室均匀性和降低局部效果的装置和方法
- Patent Title: Apparatus and method to improve uniformity and reduce local effect of process chamber
- Patent Title (中): 提高加工室均匀性和降低局部效果的装置和方法
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Application No.: US11539958Application Date: 2006-10-10
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Publication No.: US08223470B2Publication Date: 2012-07-17
- Inventor: Yu-Cheng Chang , Ying-Lin Chen
- Applicant: Yu-Cheng Chang , Ying-Lin Chen
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01T23/00
- IPC: H01T23/00
Abstract:
An apparatus includes a processing chamber having a plasma containing region, a dielectric plate secured on top of the processing chamber, a power source separated from the plasma containing region by the dielectric plate, and a chuck supported within the processing chamber. The chuck is operable and configured to move with respect to the power source.
Public/Granted literature
- US20080084649A1 APPARATUS AND METHOD TO IMPROVE UNIFORMITY AND REDUCE LOCAL EFFECT OF PROCESS CHAMBER Public/Granted day:2008-04-10
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