Invention Grant
- Patent Title: Semiconductor device with isolation trench liner
- Patent Title (中): 半导体器件带隔离沟槽衬垫
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Application No.: US13178362Application Date: 2011-07-07
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Publication No.: US08217472B2Publication Date: 2012-07-10
- Inventor: Richard J. Carter , George J. Kluth , Michael J. Hargrove
- Applicant: Richard J. Carter , George J. Kluth , Michael J. Hargrove
- Applicant Address: US TX Austin
- Assignee: Advanced Micro Devices, Inc.
- Current Assignee: Advanced Micro Devices, Inc.
- Current Assignee Address: US TX Austin
- Agency: Ingrassia Fisher & Lorenz, P.C.
- Main IPC: H01L29/772
- IPC: H01L29/772
Abstract:
A method of manufacturing a semiconductor device is provided herein, where the width effect is reduced in the resulting semiconductor device. The method involves providing a substrate having semiconductor material, forming an isolation trench in the semiconductor material, and lining the isolation trench with a liner material that substantially inhibits formation of high-k material thereon. The lined trench is then filled with an insulating material. Thereafter, a layer of high-k gate material is formed over at least a portion of the insulating material and over at least a portion of the semiconductor material. The liner material divides the layer of high-k gate material, which prevents the migration of oxygen over the active region of the semiconductor material.
Public/Granted literature
- US20110260263A1 SEMICONDUCTOR DEVICE WITH ISOLATION TRENCH LINER Public/Granted day:2011-10-27
Information query
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