Invention Grant
US08202786B2 Method for manufacturing semiconductor devices having a glass substrate
有权
具有玻璃基板的半导体器件的制造方法
- Patent Title: Method for manufacturing semiconductor devices having a glass substrate
- Patent Title (中): 具有玻璃基板的半导体器件的制造方法
-
Application No.: US12837155Application Date: 2010-07-15
-
Publication No.: US08202786B2Publication Date: 2012-06-19
- Inventor: Carsten Von Koblinski , Gerald Lackner , Karin Schrettlinger , Markus Ottowitz
- Applicant: Carsten Von Koblinski , Gerald Lackner , Karin Schrettlinger , Markus Ottowitz
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/30 ; H01L21/46
Abstract:
A method for manufacturing semiconductor devices is disclosed. A semiconductor wafer is provided having a first surface and a second surface opposite to the first surface. A first glass substrate is provided which has at least one of cavities and openings at the bonding surface. The first glass substrate is bonded to the first surface of the semiconductor wafer such that the metal pads are arranged within respective cavities or openings of the first glass substrate. The second surface of the semiconductor wafer is machined. At least one metallization region is formed on the machined second surface of the semiconductor wafer.
Public/Granted literature
- US20120012994A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES HAVING A GLASS SUBSTRATE Public/Granted day:2012-01-19
Information query
IPC分类:
