A design structure of a circuit for managing voltage swings across FETs comprising a reference precision resistor, a first and second FET, wherein a gate of the first FET is tied to a gate of the second FET, wherein a drain to source resistance of the second FET is substantially equal to or is a multiple of a resistance of the reference precision resistor, and wherein a gate voltage of the second FET is applied to a gate of the first FET to set a bias point of the first FET, and a third FET cascoded to the first FET, wherein a source of the first FET is coupled to the drain of the third FET to extend a voltage range in which respective gate voltages of the first and third FETs maintain a linear relationship with respective drain to source voltages of the first and third FETs.