Invention Grant
- Patent Title: Magnetoresistive element and method of manufacturing the same
- Patent Title (中): 磁阻元件及其制造方法
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Application No.: US12320668Application Date: 2009-01-30
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Publication No.: US08184408B2Publication Date: 2012-05-22
- Inventor: Shuichi Murakami , Hideaki Fukuzawa , Hiromi Yuasa , Yoshihiko Fuji
- Applicant: Shuichi Murakami , Hideaki Fukuzawa , Hiromi Yuasa , Yoshihiko Fuji
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Nixon & Vanderhye, P.C.
- Priority: JP2008-019365 20080130
- Main IPC: G11B5/39
- IPC: G11B5/39 ; H01L29/82
Abstract:
A magnetoresistive element includes a magnetoresistive film including a magnetization pinned layer, a magnetization free layer, an intermediate layer arranged between the magnetization pinned layer and the magnetization free layer, a cap layer arranged on the magnetization pinned layer or on the magnetization free layer, and a functional layer formed of an oxygen- or nitrogen-containing material and arranged in the magnetization pinned layer, or in the magnetization free layer, and a pair of electrodes which pass a current perpendicularly to a plane of the magnetoresistive film, in which a crystalline orientation plane of the functional layer is different from a crystalline orientation plane of its upper or lower adjacent layer.
Public/Granted literature
- US20090190262A1 Magnetoresistive element and method of manufacturing the same Public/Granted day:2009-07-30
Information query
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