发明授权
US08179708B2 Anti-cross-talk circuitry for ROM arrays 有权
用于ROM阵列的反串扰电路

Anti-cross-talk circuitry for ROM arrays
摘要:
A circuit and method precharge a selected bit-line in a read only memory (ROM) array during a precharge period of a read cycle. At least one bit-line adjacent to the selected bit-line is discharged during the precharge period. After the precharge period, the selected bit-line is read such that parasitic capacitance effects on the selected bit-line are reduced.
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