Invention Grant
- Patent Title: Semiconductor device having reduced standby leakage current and increased driving current and method for manufacturing the same
- Patent Title (中): 具有降低的待机漏电流和增加的驱动电流的半导体器件及其制造方法
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Application No.: US12638233Application Date: 2009-12-15
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Publication No.: US08178921B2Publication Date: 2012-05-15
- Inventor: Dong Sun Sheen , Sang Tae Ahn , Seok Pyo Song , Hyeon Ju An
- Applicant: Dong Sun Sheen , Sang Tae Ahn , Seok Pyo Song , Hyeon Ju An
- Applicant Address: KR Kyoungki-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Kyoungki-do
- Agency: Ladas & Parry LLP
- Priority: KR10-2006-0096543 20060929
- Main IPC: H01L29/78
- IPC: H01L29/78
Abstract:
A semiconductor device includes a semiconductor substrate having an active region which includes a gate forming zone and an isolation region; an isolation layer formed in the isolation region of the semiconductor substrate to expose side surfaces of a portion of the active region including the gate forming zone, such that the portion of the active region including the gate forming zone constitutes a fin pattern; a silicon epitaxial layer formed on the active region including the fin pattern; and a gate formed to cover the fin pattern on which the silicon epitaxial layer is formed.
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