发明授权
- 专利标题： Semiconductor device having reduced standby leakage current and increased driving current and method for manufacturing the same
- 专利标题（中）： 具有降低的待机漏电流和增加的驱动电流的半导体器件及其制造方法
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申请号： US12638233申请日： 2009-12-15
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公开(公告)号： US08178921B2公开(公告)日： 2012-05-15
- 发明人: Dong Sun Sheen , Sang Tae Ahn , Seok Pyo Song , Hyeon Ju An
- 申请人： Dong Sun Sheen , Sang Tae Ahn , Seok Pyo Song , Hyeon Ju An
- 申请人地址： KR Kyoungki-do
- 专利权人： Hynix Semiconductor Inc.
- 当前专利权人： Hynix Semiconductor Inc.
- 当前专利权人地址： KR Kyoungki-do
- 代理机构： Ladas & Parry LLP
- 优先权： KR10-2006-0096543 20060929
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
A semiconductor device includes a semiconductor substrate having an active region which includes a gate forming zone and an isolation region; an isolation layer formed in the isolation region of the semiconductor substrate to expose side surfaces of a portion of the active region including the gate forming zone, such that the portion of the active region including the gate forming zone constitutes a fin pattern; a silicon epitaxial layer formed on the active region including the fin pattern; and a gate formed to cover the fin pattern on which the silicon epitaxial layer is formed.
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