Invention Grant
- Patent Title: Method of fabricating semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US11850833Application Date: 2007-09-06
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Publication No.: US08178421B2Publication Date: 2012-05-15
- Inventor: Hidekazu Kikuchi
- Applicant: Hidekazu Kikuchi
- Applicant Address: JP Tokyo
- Assignee: Oki Semiconductor Co., Ltd.
- Current Assignee: Oki Semiconductor Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Volentine & Whitt, PLLC
- Priority: JP2006-251611 20060915
- Main IPC: H01L21/44
- IPC: H01L21/44

Abstract:
A method of manufacturing a semiconductor device capable of preventing a cut portion from becoming chipped when dicing. The method of manufacturing a semiconductor device includes preparing a semiconductor wafer having an upper surface (first surface) including a plurality of device regions and partition regions for dividing the plurality of device regions, and a lower surface (second surface) opposite from the upper surface (first surface), forming upper layer wires on the device regions of the upper surface (first surface), etching the semiconductor wafer from a side of the lower surface (second surface) to form a through hole through which the upper layer wire is exposed, and to form a groove in a region of the lower surface (second surface) corresponding to the partition region of the upper surface (first surface), and dicing the semiconductor wafer to form individual device regions.
Public/Granted literature
- US20080070379A1 METHOD OF FABRICATING SEMICONDUCTOR DEVICE Public/Granted day:2008-03-20
Information query
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