发明授权
- 专利标题： Integrated circuit device with low capacitance and high thermal conductivity interface
- 专利标题（中）： 具有低电容和高导热性界面的集成电路器件
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申请号： US12544850申请日： 2009-08-20
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公开(公告)号： US08174112B1公开(公告)日： 2012-05-08
- 发明人: James Karp , Vassili Kireev
- 申请人： James Karp , Vassili Kireev
- 申请人地址： US CA San Jose
- 专利权人： Xilinx, Inc.
- 当前专利权人： Xilinx, Inc.
- 当前专利权人地址： US CA San Jose
- 代理商 Kenneth Glass; LeRoy D. Maunu; Lois D. Cartier
- 主分类号： H01L23/34
- IPC分类号： H01L23/34
摘要：
An integrated circuit device includes an integrated circuit formed in a semiconductor die and an integrated circuit package containing the semiconductor die. The integrated circuit package includes a thermal interface material substantially between the semiconductor die and a heat spreader of the integrated circuit device for conducting heat from the semiconductor die to the heat spreader. The thermal interface material includes diamond particles and has a thickness selected to reduce capacitance between the semiconductor die and the heat spreader over that of a conventional integrated circuit device without reducing the rate of thermal conduction from the semiconductor die to the heat spreader. As a result, the integrated circuit device has improved electrostatic discharge immunity.
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